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SUD50N03-16P
New Product
N-Channel 30-V (D-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) r DS(on) ( W )
I D (A) a
FEATURES
D TrenchFET r Power MOSFET
D PWM Optimized
D 100% Rg Tested
30
TO-252
G
D
S
0.016 @ V GS = 10 V
0.024 @ V GS = 4.5 V
Drain Connected to Tab
15
12
G
D
APPLICATIONS
D High-Side DC/DC
? Desktop
? Server
D DDR DC/DC Converter
Top View
Ordering Information: SUD50N03-16P—E3 (Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Drain-Source Voltage
Gate-Source Voltage
Parameter
T C = 25 _ C
Symbol
V DS
V GS
Limit
30
" 20
37
Unit
V
Continuous Drain
Current a
T A = 25 _ C
I D
15
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T A = 100 _ C
L = 0 0.1 1 mH
T C = 25 _ C
T A = 25 _ C
I DM
I S
I AS
E AS
P D
T J , T stg
10.6
40
5
25
31.25
40.8
6.5 a
? 55 to 175
A
mJ
W
_ C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t v 10 sec
Steady State
R thJA
R thJC
18
40
3.0
23
50
3.7
_ C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
www.vishay.com
1
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